Determination of the Electronic Energy Levels of a Quantum well Heterostruture Zn\(_{1-x}\)Mg\(_{x}\)O/ZnO/Zn\(_{1-x}\)Mg\(_{x}\)O

This paper studies a quantum well heterostructure made up by a zinc oxide (ZnO) thin layer (well) sandwiched between two Zn1-xMgxO layers acting as potential barriers. Setting the width of the well to a = 10 nm, the allowed quantum states in the conduction band (CB) and the wave function profiles are examined for two values of magnesium concentration : x = 0.1 and x = 0.2. The calculated wavelengths corresponding to intra-band transitions in the conduction band are in the infrared domain of the electromagnetic spectrum. These wavelengths depend on x, allowing to control the optoelectronic properties of the quantum well by adjusting the concentration x during the growth process.